Comparison of deposition models for a TEOS LPCVD process
نویسندگان
چکیده
We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to SEM measurements. 2007 Elsevier Ltd. All rights reserved.
منابع مشابه
Integrated multiscale process simulation
We summarize two approaches to integrated multiscale process simulation (IMPS), particularly relevant to integrated circuit (IC) fabrication, in which models for equipment (m) and feature (lm) scales are solved simultaneously. The first approach uses regular grids, and is applied to low-pressure chemical vapor deposition (LPCVD) of silicon dioxide from tetraethoxysilane (TEOS). The second appro...
متن کاملSystematic Classification of LPCVD Processes
A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radii film thickness distribution on silicon wafers processed in a conventionaI horizontal hot-wall reactor. Comparing Lhmretical predictions of these models with experimental results obtained from various LPCVD processes, a good qu...
متن کاملThe Modeling of Lpcvd in Single-wafer Reactors as a Tool for Process Optimization and Equipment Design
An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and a t the microscopic (feature-scale) level. Examples of modeling results f o r single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen a r e presented and comparisons a r e made ...
متن کاملComparison of Deposition Models for a TEOS CVD Process
This paper focuses on the comparison of calibrated models for teos deposition in a cvd process according to sem images of SiO2 layers. We describe the applied models and the parameters which lead to the best results for each model. The simulations have been performed using our topography simulator elsa (Enhanced Level Set Applications) which follows the surface evolution by solving the level se...
متن کاملComparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobil...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007